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APTGT150A170G
Phase leg Trench + Field Stop IGBT(R) Power Module
VBUS Q1 G1
VCES = 1700V IC = 150A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant
E1
OUT
Q2 G2
E2 0/VBUS
G1 E1
VBUS
0/VBUS
OUT
E2 G2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Safe Operating Area
300A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-5
APTGT150A170G - Rev 1
July, 2006
Max ratings 1700 250 150 300 20 890
Unit V A V W
APTGT150A170G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 150A Tj = 125C VGE = VCE , IC = 3mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 350 2.4 6.5 600 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 150A R G = 4.7 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 150A R G = 4.7 VGE = 15V Tj = 125C VBus = 900V IC = 150A Tj = 125C R G = 4.7
Min
Typ 13.5 0.55 0.44 370 40 650 180 400 50 800 300 48
Max
Unit nF
ns
ns
mJ 47
Diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Er
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1700
Typ
Max 350 600
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1700V
IF = 150A
150 1.8 1.9 385 490 38 62 17.5 35
2.2
V ns
July, 2006 2-5 APTGT150A170G - Rev 1
IF = 150A VR = 900V
di/dt =1600A/s
C mJ
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APTGT150A170G
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt
Thermal and package characteristics
Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode
Min
Typ
Max 0.14 0.26 150 125 100 5 3.5 280
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
3500 -40 -40 -40 3 2
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3-5
APTGT150A170G - Rev 1
July, 2006
APTGT150A170G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 300 250 200 IC (A)
TJ=125C VGE =13V TJ = 125C VGE =20V
300 250
IC (A)
T J=25C
200 150 100 50 0 0 1 2 VCE (V) 3 4
150
VGE=15V
100 50 0 0 1 2 3 V CE (V) 4 5
VGE=9V
300 250 200 IC (A) 150 100 50 0 5 6
Transfert Characteristics
TJ=25C
120 100 80
Energy losses vs Collector Current
VCE = 900V VGE = 15V RG = 4.7 T J = 125C Eon Eoff
T J=125C
E (mJ)
60
Er
40
TJ=125C
20 0
7
8
9 V GE (V)
10
11
12
13
0
50
100
150 IC (A)
200
250
300
Switching Energy Losses vs Gate Resistance 120 100 80 E (mJ) 60 40 20 0 0 5 10 15 20 25 Gate Resistance (ohms) 30
VCE = 900V VGE =15V IC = 150A T J = 125C Eon
Reverse Bias Safe Operating Area 350 300 250 IC (A) 200 150 100 50 0 0 400 800 1200 1600 2000 VCE (V)
V GE=15V T J=125C RG=4.7
Eoff Er
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 Thermal Impedance (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 IGBT
0.5 0.3
0 0.00001
rectangular Pulse Duration (Seconds)
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4-5
APTGT150A170G - Rev 1
July, 2006
0.7
APTGT150A170G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 20
VCE =900V D=50% RG=4.7 T J=125C T C=75C
Forward Characteristic of diode 300 250
T J=25C
15
ZVS
200 IF (A) 150
TJ=125C
10
ZCS
100 5
hard switching
50 0
TJ =125C
0 0 40 80 120 IC (A) 160 200 240
0
0.5
1
1.5 V F (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 Thermal Impedance (C/W)
Diode
0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT150A170G - Rev 1
Microsemi reserves the right to change, without notice, the specifications and information contained herein
July, 2006

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